- Manufacturer :
 - Vishay
 
- Product Category :
 - Transistors - FETs, MOSFETs - Arrays
 
- Current - Continuous Drain (Id) @ 25°C :
 - 5.7A
 
- Drain to Source Voltage (Vdss) :
 - 30V
 
- FET Feature :
 - Logic Level Gate
 
- FET Type :
 - 2 N-Channel (Dual)
 
- Gate Charge (Qg) (Max) @ Vgs :
 - 11nC @ 4.5V
 
- Input Capacitance (Ciss) (Max) @ Vds :
 - -
 
- Mounting Type :
 - Surface Mount
 
- Operating Temperature :
 - -55°C ~ 150°C (TJ)
 
- Power - Max :
 - 1.1W
 
- Product Status :
 - Obsolete
 
- Rds On (Max) @ Id, Vgs :
 - 22mOhm @ 7.5A, 10V
 
- Supplier Device Package :
 - 8-SOIC
 
- Vgs(th) (Max) @ Id :
 - 3V @ 250µA
 
- Datasheets
 - SI4804BDY-T1-E3
 
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| Part | Manufacturer | Stock | Description | 
|---|---|---|---|
| SI4800,518 | NXP Semiconductors | 35,000 | MOSFET N-CH 30V 9A 8SO | 
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| SI4800BDY-T1-GE3 | Vishay | 5,000 | MOSFET N-CH 30V 6.5A 8SO | 
| SI4804BDY-T1-GE3 | Vishay | 35,000 | MOSFET 2N-CH 30V 5.7A 8SOIC | 
| SI4804CDY-T1-E3 | Vishay | 35,000 | MOSFET 2N-CH 30V 8A 8SO | 
| SI4804CDY-T1-GE3 | Vishay | 35,000 | MOSFET 2N-CH 30V 8A 8SOIC | 
| SI4808DY-T1-E3 | Vishay | 35,000 | MOSFET 2N-CH 30V 5.7A 8SOIC | 
| SI4808DY-T1-GE3 | Vishay | 35,000 | MOSFET 2N-CH 30V 5.7A 8SOIC | 
| SI4812BDY-T1-E3 | Vishay | 35,000 | MOSFET N-CH 30V 7.3A 8SO | 
| SI4812BDY-T1-GE3 | Vishay | 35,000 | MOSFET N-CH 30V 7.3A 8SO | 
| SI4814BDY-T1-E3 | Vishay | 35,000 | MOSFET 2N-CH 30V 10A 8SOIC | 
| SI4814BDY-T1-GE3 | Vishay | 35,000 | MOSFET 2N-CH 30V 10A 8SOIC | 
| SI4816BDY-T1-E3 | Vishay | 35,000 | MOSFET 2N-CH 30V 5.8A 8-SOIC | 
| SI4816BDY-T1-GE3 | Vishay | 35,000 | MOSFET 2N-CH 30V 5.8A 8-SOIC | 
| SI4816DY-T1-E3 | Vishay | 35,000 | MOSFET 2N-CH 30V 5.3A 8-SOIC | 

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